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GRADE - Graphene-based Devices and Circuits for RF Applications

  • 27890
  • CORDIS - PROJECTS 01/10/2012
  • RISULTATO

GRADE is a three-year STREP proposal focused on advanced RTD activities necessary to demonstrate the proof-of-concept of novel graphene-based electronic devices operating at terahertz (THz) frequencies. We propose two different concepts with specific advantages. Graphene field effect transistors (GFET) use graphene as a high-mobility transistor channel. Alternative 'graphene base transistors' (GBT) are novel hot-electron devices that use graphene sandwiched between two insulating layers, each in turn covered by a metal layer. Considering the unique high frequency characteristics of the GFET and the GBT, the consortium envisions innovative applications in communication, automotive, security and environmental monitoring. Low power wireless communication systems operating above 100Gbit/s or handheld portable THz sensor systems for detection of dangerous agents seem feasible with active devices operating in the THz regime. To be affordable for a broad range of consumers, THz devices must be scalable and integrated with silicon technology. GBTs and GFETs can fulfil this requirement. The proposed research enables the demonstration and assessment of these novel device concepts for future THz systems, and prepares their transition to semiconductor manufacturing. To achieve these goals, GRADE unites a powerful consortium: Four academic partners, two of them with a strong experimental background and excellent processing facilities, one focused on physics-based modelling and simulation and one specialized in compact modelling and circuit design. One research institute, which provides a professionally run pilot production clean room, state of the art processing and an entry point for graphene into manufacturing. One global semiconductor manufacturer willing to push their capabilities to enable the fabrication of integrated graphene RF circuits, including the integration on SiC and co-integration with pre-fabricated CMOS wafers.


Start date: 2012-10-01
End date: 2015-09-30

Duration: 36 months

Project Reference: 317839

Project cost: 5139129 EURO
Project Funding: 3650992 EURO

Subprogramme Area: Very advanced nanoelectronic components: design, engineering, technology and manufacturability
Contract type: Collaborative project (generic)


Coordinatore: KUNGLIGA TEKNISKA HOEGSKOLAN - (SVERIGE) - Simon DEMIR (Mr)

Altri Partecipanti

  • IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK - (DEUTSCHLAND)
  • INFINEON TECHNOLOGIES AG - (DEUTSCHLAND)
  • CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA - (ITALIA)
  • UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - (FRANCE)
  • UNIVERSITE BORDEAUX I - (FRANCE)
Link
Quadro di finanziamento
  • 7FP-ICT : TECNOLOGIE DELL’INFORMAZIONE E DELLA COMUNICAZIONE: priorità tematica 3 nell'ambito del programma specifico “Cooperazione” recante attuazione del Settimo programma quadro (2007-2013) di attività comunitarie di ricerca, sviluppo tecnologico e dimostrazione
Area di interesse
  • Unione Europea